N-channel power MOSFET with 650V drain-source breakdown voltage and 12A continuous drain current. Features low 279mΩ maximum drain-source on-resistance and 90W power dissipation. Operates from -55°C to 150°C, with fast switching speeds including 8ns fall time and 25ns turn-on delay. Packaged in a surface-mount D2PAK (TO-263AB) for efficient thermal management. RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STB16N65M5 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
279mR
Fall Time
8ns
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
299mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
6ns
Turn-On Delay Time
25ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB16N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB16N65M5 to view detailed technical specifications.
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