N-Channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 500mΩ Rds(on) and 190W maximum power dissipation. Designed for high-efficiency switching applications, it boasts a 17ns fall time and 68ns turn-off delay. Packaged in a TO-262-3 (I2SPAK-3) case, this lead-free and RoHS compliant MOSFET operates from -55°C to 150°C.
PackageTO-262-3
Resistance0.38R
Current Rating13A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STB16NK65Z-S technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.75nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 500mR |
| Resistance | 0.38R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 68ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB16NK65Z-S Datasheet
Download the complete datasheet for Stmicroelectronics STB16NK65Z-S to view detailed technical specifications.
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