N-Channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 500mΩ Rds(on) and 190W maximum power dissipation. Designed for high-efficiency switching applications, it boasts a 17ns fall time and 68ns turn-off delay. Packaged in a TO-262-3 (I2SPAK-3) case, this lead-free and RoHS compliant MOSFET operates from -55°C to 150°C.
PackageTO-262-3
Resistance0.38R
Current Rating13A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STB16NK65Z-S technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
650V
Fall Time
17ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.75nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Rds On Max
500mR
Resistance
0.38R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
68ns
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB16NK65Z-S Datasheet
Download the complete datasheet for Stmicroelectronics STB16NK65Z-S to view detailed technical specifications.
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