Stmicroelectronics
STB16NM50N
15A, 500V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STB16NM50N technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
260mR
Drain to Source Voltage (Vdss)
500V
Fall Time
16ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
260mR
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
60ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB16NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STB16NM50N to view detailed technical specifications.
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