N-channel power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3.5mΩ drain-source resistance (Rds On Max) and 330W maximum power dissipation. Designed for surface mounting with a maximum operating temperature of 175°C. Includes fast switching characteristics with a 25ns turn-on delay and 50ns fall time. RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power330W
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Technical Specifications
Stmicroelectronics STB180N55F3 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
3.5mR
Drain to Source Voltage (Vdss)
55V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
6.8nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
330W
Radiation Hardening
No
Rds On Max
3.5mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
110ns
Turn-On Delay Time
25ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB180N55F3 Datasheet
Download the complete datasheet for Stmicroelectronics STB180N55F3 to view detailed technical specifications.
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