N-channel Power MOSFET featuring 550V drain-to-source breakdown voltage and 13A continuous drain current. Offers a low 180mΩ typical drain-to-source resistance. Designed for surface mounting in a D2PAK package, this component boasts a 90W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 13ns fall time and 29ns turn-off delay time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
Quick Jump:
Technical Specifications
Stmicroelectronics STB18N55M5 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
550V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
550V
Fall Time
13ns
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
1.26nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
192mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
29ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB18N55M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB18N55M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.