N-channel Power MOSFET featuring 550V drain-to-source breakdown voltage and 13A continuous drain current. Offers a low 180mΩ typical drain-to-source resistance. Designed for surface mounting in a D2PAK package, this component boasts a 90W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 13ns fall time and 29ns turn-off delay time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STB18N55M5 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 550V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.6mm |
| Input Capacitance | 1.26nF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 192mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 29ns |
| Width | 10.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB18N55M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB18N55M5 to view detailed technical specifications.
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