N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers low 198mΩ typical drain-source on-resistance and a maximum of 220mΩ. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 110W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 9ns fall time and 36ns turn-on delay time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STB18N65M5 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
198mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
220mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
1.24nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
220mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
9ns
Turn-On Delay Time
36ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB18N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB18N65M5 to view detailed technical specifications.
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