N-channel Power MOSFET, 250V drain-source voltage, 17A continuous drain current. Features 165mOhm maximum drain-source on-resistance at 10V gate-source voltage and 29.5nC typical gate charge. Housed in a 3-pin D2PAK surface-mount package with gull-wing leads, offering a maximum power dissipation of 110W. Operates across a wide temperature range from -55°C to 175°C.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STB18NF25 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
9.35(Max)
Package Height (mm)
4.6(Max)
Seated Plane Height (mm)
4.83(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
250V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
17A
Maximum Drain Source Resistance
165@10VmOhm
Typical Gate Charge @ Vgs
29.5@10VnC
Typical Gate Charge @ 10V
29.5nC
Typical Input Capacitance @ Vds
1000@25VpF
Maximum Power Dissipation
110000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STB18NF25 Datasheet
Download the complete datasheet for Stmicroelectronics STB18NF25 to view detailed technical specifications.
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