N-Channel Power MOSFET, D2PAK package, offering 600V drain-source voltage and 13A continuous drain current. Features a maximum on-resistance of 285mΩ at a nominal gate-source voltage of 3V. Designed for surface mounting with a maximum power dissipation of 110W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 25ns. RoHS compliant.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STB18NM60N technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
13A
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
285mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
285mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
55ns
Turn-On Delay Time
12ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB18NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STB18NM60N to view detailed technical specifications.
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