N-channel Power MOSFET featuring 600V drain-source voltage and 13A continuous drain current. This surface-mount device offers a low 0.25 Ohm typical drain-source on-resistance and a fast diode. Operating from -55°C to 150°C, it boasts a maximum power dissipation of 130W and is housed in a TO-263-3 (D2PAK) package. Key switching parameters include an 18ns fall time, 13ns turn-off delay, and 55ns turn-on delay.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB18NM60ND technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 290mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.4mm |
| Input Capacitance | 1.03nF |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 55ns |
| Width | 8.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB18NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STB18NM60ND to view detailed technical specifications.
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