N-channel power MOSFET featuring 800V drain-source breakdown voltage and 17A continuous drain current. Offers a low 295mΩ maximum drain-source on-resistance and 190W power dissipation. Designed for surface mounting in a D2PAK package, this MDmesh™ series component boasts fast switching times with turn-on delay of 18ns and fall time of 50ns. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB18NM80 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
295mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
295mR
Fall Time
50ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
2.07nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
190W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
295mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
96ns
Turn-On Delay Time
18ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB18NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STB18NM80 to view detailed technical specifications.
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