N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 15A continuous drain current. Offers a low 160mΩ typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component operates within a -55°C to 150°C temperature range and supports up to 90W power dissipation. Key switching characteristics include an 11ns fall time and 19ns turn-off delay.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STB19NF20 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
160MR
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
800pF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
160mR
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
19ns
Turn-On Delay Time
11.5ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB19NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STB19NF20 to view detailed technical specifications.
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