PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STB19NM65N technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 15.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| Series | MDmesh™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB19NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STB19NM65N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.