Stmicroelectronics
STB20N65M5
N-channel 650 V, 0.160 Ohm typ., 18 A MDmesh M5 Power MOSFET in D2PAK package
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB20N65M5 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 710V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 190MR |
| Fall Time | 7.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.434nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB20N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB20N65M5 to view detailed technical specifications.
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