N-CHANNEL POWER MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. Offers a low 250mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-262-3 package. Includes 8.5ns fall time and 9ns turn-off delay time. Maximum power dissipation is 192W.
PackageTO-262-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB20NM50-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 550V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.48nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 192W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 9ns |
| DC Rated Voltage | 550V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB20NM50-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB20NM50-1 to view detailed technical specifications.
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