N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 20A continuous drain current. Surface mount D2PAK package with 250mΩ maximum drain-source on-resistance. Includes a fast recovery diode, offering a 15ns fall time and 22ns turn-on delay. Maximum power dissipation of 192W, operating from -65°C to 150°C. RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power192W
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Technical Specifications
Stmicroelectronics STB20NM50FDT4 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.38nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 192W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Turn-On Delay Time | 22ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB20NM50FDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB20NM50FDT4 to view detailed technical specifications.
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