The STB20NM60-1 is an N-channel power MOSFET with a maximum operating temperature range of -65°C to 150°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 20A. The device has a maximum power dissipation of 192W and a gate to source voltage of 30V. It is packaged in a TO-262-3 package and is available in a lead-free version. The STB20NM60-1 is RoHS compliant and part of the MDmesh series.
PackageTO-262-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STB20NM60-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 192W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 42ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB20NM60-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB20NM60-1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
