Automotive grade N-channel SuperMESH™ Power MOSFET featuring 500V drain-source breakdown voltage and 17A continuous drain current. Offers a low 230mΩ typical drain-source on-resistance, with a maximum of 270mΩ. Designed for surface mounting in a D2PAK package, this device boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Includes Zener protection for enhanced reliability.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB21NK50Z technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.6mm |
| Input Capacitance | 2.6nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Nominal Vgs | 3.75V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 28ns |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB21NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STB21NK50Z to view detailed technical specifications.
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