N-Channel Power MOSFET, D2PAK package, featuring 600V drain-to-source breakdown voltage and 17A continuous drain current. Offers a low 220mΩ on-state resistance at a nominal 3V gate-source voltage. Designed for surface mounting with a maximum power dissipation of 140W and operating temperatures from -55°C to 150°C. RoHS compliant with fast switching characteristics including a 31ns fall time.
PackageD2PAK
Current Rating17A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB21NM60N technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 600V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| On-State Resistance | 220mR |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 84ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB21NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STB21NM60N to view detailed technical specifications.
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