N-channel power MOSFET featuring 600V drain-source breakdown voltage and 220mΩ maximum drain-source on-resistance. This surface-mount device offers a continuous drain current of 16A and a maximum power dissipation of 125W. Key switching characteristics include a 38ns fall time, 74ns turn-off delay, and 11ns turn-on delay. Operating across a wide temperature range from -55°C to 150°C, it is housed in a D2PAK package.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STB22NM60N technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 220mR |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.6mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 11ns |
| Width | 10.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB22NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STB22NM60N to view detailed technical specifications.
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