N-channel power MOSFET featuring 600V drain-source breakdown voltage and 19A continuous drain current. Offers a low 180mΩ maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts a 150W maximum power dissipation and fast switching times with a 25ns turn-on delay and 36ns fall time. Operating across a wide temperature range from -55°C to 150°C, it is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STB23NM60N technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB23NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STB23NM60N to view detailed technical specifications.
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