N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 19A continuous drain current. Offers a maximum drain-source on-resistance of 190mΩ at a nominal Vgs of 3V. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 160W and operates within a temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay time of 25ns and fall time of 20ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power160W
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Technical Specifications
Stmicroelectronics STB24NM65N technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 190mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB24NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STB24NM65N to view detailed technical specifications.
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