N-channel power MOSFET, TO-262-3 package, featuring 500V drain-source breakdown voltage and 22A continuous drain current. Offers a low 140mΩ maximum drain-source on-resistance. Designed for through-hole mounting with a maximum power dissipation of 160W. Includes a 25V gate-to-source voltage rating and operates within a -55°C to 150°C temperature range.
PackageTO-262-3
Current Rating22A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STB25NM50N-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 140mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.565nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB25NM50N-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB25NM50N-1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.