The STB25NM60N-1 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 21A. The device is packaged in a TO-262-3 package and is lead free and RoHS compliant. It has a maximum power dissipation of 160W and a gate to source voltage of 25V.
PackageTO-262-3
Current Rating20A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB25NM60N-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 21A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 94ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB25NM60N-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB25NM60N-1 to view detailed technical specifications.
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