N-channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 21A Continuous Drain Current, and 145mR Drain to Source Resistance. Features a TO-263-3 surface mount package, 190W Max Power Dissipation, and operates from -55°C to 150°C. Includes fast switching characteristics with 22ns Turn-On Delay Time and 27.5ns Fall Time. RoHS compliant and lead-free.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB26NM60ND technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 27.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.6mm |
| Input Capacitance | 1.817nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 175mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 69ns |
| Turn-On Delay Time | 22ns |
| Weight | 0.139332oz |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB26NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STB26NM60ND to view detailed technical specifications.
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