Stmicroelectronics
STB28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB28N60M2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.44nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 14.5ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB28N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STB28N60M2 to view detailed technical specifications.
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