N-channel Power MOSFET featuring 650 V breakdown voltage and a typical on-resistance of 0.15 Ohm. Delivers up to 20 A continuous drain current. Designed for high-efficiency switching applications, this component operates reliably up to a maximum temperature of 150°C. Encased in a D2PAK package for robust thermal management.
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Technical Specifications
Stmicroelectronics STB28N65M2 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics STB28N65M2 Datasheet
Download the complete datasheet for Stmicroelectronics STB28N65M2 to view detailed technical specifications.
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