N-channel Power MOSFET featuring 600V drain-source voltage and 23A continuous drain current. This surface mount device offers a low 150mΩ typical drain-source resistance and 190W maximum power dissipation. Designed with a fast diode, it exhibits a 27ns fall time and 92ns turn-off delay. Packaged in a TO-263-3 (D2PAK) for efficient thermal management, operating from -55°C to 150°C.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB28NM60ND technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.6mm |
| Input Capacitance | 2.09nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 23.5ns |
| Weight | 0.139332oz |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB28NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STB28NM60ND to view detailed technical specifications.
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