N-channel Power MOSFET featuring 620V drain-source breakdown voltage and 2.2A continuous drain current. Offers a low 3.6 Ohm maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts fast switching speeds with a 8ns turn-on delay and 22ns fall time. Maximum power dissipation is 45W, with operating temperatures ranging from -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power45W
Quick Jump:
Technical Specifications
Stmicroelectronics STB2N62K3 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 3.6R |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STB2N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STB2N62K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.