N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 22A continuous drain current. Offers a typical 0.125 Ohm drain-source on-resistance, with a maximum of 139mR. Designed for surface mounting in a D2PAK package, this component operates within a temperature range of -55°C to 150°C and boasts a 140W maximum power dissipation. Includes fast switching characteristics with 10ns fall time and 50ns turn-on/off delay times.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power140W
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Technical Specifications
Stmicroelectronics STB30N65M5 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 139MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.88nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 139mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB30N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB30N65M5 to view detailed technical specifications.
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