N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 30A continuous drain current. Offers a low 65mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for surface mounting in a D2PAK package, this component boasts a 125W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 35ns turn-on delay and 8.8ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Stmicroelectronics STB30NF20 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 65mR |
| Fall Time | 8.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.6mm |
| Input Capacitance | 1.597nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 35ns |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB30NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STB30NF20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
