Stmicroelectronics
STB30NM60N
25A, 600V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB30NM60N technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 130mR |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 130mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 125ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB30NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STB30NM60N to view detailed technical specifications.
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