N-CHANNEL Power MOSFET, D2PAK package, offering 600V drain-source breakdown voltage and a continuous drain current of 25A. Features a low drain-source on-resistance of 130mΩ at a nominal Vgs of 4V. This surface-mount component boasts a maximum power dissipation of 190W and operates within a temperature range of -55°C to 150°C. Includes a fall time of 75ns and a turn-off delay time of 110ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB30NM60ND technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 130MR |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 130mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | FDmesh™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STB30NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STB30NM60ND to view detailed technical specifications.
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