N-channel power MOSFET featuring 600V drain-source breakdown voltage and 26A continuous drain current. Offers low 125mΩ typical on-resistance and 190W maximum power dissipation. Designed for surface mounting in a TO-263-3 package, this component boasts fast switching characteristics with a 9ns fall time and 16ns turn-on delay. Operating temperature range from -55°C to 150°C, it is RoHS compliant and lead-free.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB33N60M2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 26A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.781nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 109ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB33N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STB33N60M2 to view detailed technical specifications.
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