N-channel power MOSFET featuring 650V drain-source breakdown voltage and 28A continuous drain current. Offers low 110mΩ typical drain-source on-resistance. Surface-mount D2PAK package with 190W maximum power dissipation. Operates across a -55°C to 150°C temperature range.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB34N65M5 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 110MR |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.6mm |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 59ns |
| Turn-On Delay Time | 59ns |
| Width | 9.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB34N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB34N65M5 to view detailed technical specifications.
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