N-channel Power MOSFET featuring 600V drain-source voltage and 29A continuous drain current. This surface-mount device offers a low 110mΩ drain-source on-resistance and 190W power dissipation. It operates within a -55°C to 150°C temperature range and includes a fast diode. The D2PAK package facilitates efficient thermal management.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB34NM60ND technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 110MR |
| Fall Time | 61.8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.6mm |
| Input Capacitance | 2.785nF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 111ns |
| Turn-On Delay Time | 30ns |
| Width | 10.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB34NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STB34NM60ND to view detailed technical specifications.
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