N-channel Power MOSFET with 620V drain-source breakdown voltage and 2.7A continuous drain current. Features 2.5Ω maximum drain-source on-resistance and 45W maximum power dissipation. Operates from -55°C to 150°C, with a 3.75V threshold voltage. Packaged in a surface-mount D2PAK (TO-263AB) for tape and reel deployment. RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power45W
Quick Jump:
Technical Specifications
Stmicroelectronics STB3N62K3 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 2.5R |
| Fall Time | 15.6ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.6mm |
| Input Capacitance | 385pF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 2.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 9ns |
| Width | 10.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB3N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STB3N62K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.