N-channel MOSFET featuring 200V drain-source breakdown voltage and 40A continuous drain current. Offers low 45mΩ drain-source on-resistance at 10Vgs. Designed for surface mount applications with a D2PAK package, this component boasts a maximum power dissipation of 160W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 20ns turn-on delay and 22ns fall time.
PackageD2PAK
Current Rating40A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB40NF20 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
45mR
Fall Time
22ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
2.5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
45mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
74ns
Turn-On Delay Time
20ns
DC Rated Voltage
200V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB40NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STB40NF20 to view detailed technical specifications.
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