N-channel power MOSFET featuring 650V drain-source breakdown voltage and 33A continuous drain current. Offers low 79mΩ maximum drain-source on-resistance and 190W maximum power dissipation. Designed for surface mount applications in a D2PAK package, this component operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 13ns fall time and 61ns turn-on delay time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB42N65M5 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
33A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
79mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
79mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
4.65nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
79mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
65ns
Turn-On Delay Time
61ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB42N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB42N65M5 to view detailed technical specifications.
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