N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 35A continuous drain current. Offers a low 78mΩ maximum drain-source on-resistance. Designed for surface mount applications in a D2PAK package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 208W. Lead-free and RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power208W
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Technical Specifications
Stmicroelectronics STB45N65M5 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
35A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
78mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
78mR
Gate to Source Voltage (Vgs)
25V
Height
4.6mm
Input Capacitance
3.375nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
208W
Radiation Hardening
No
Rds On Max
78mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
79.5ns
Turn-On Delay Time
79.5ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB45N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB45N65M5 to view detailed technical specifications.
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