N-channel power MOSFET featuring 60V drain-source breakdown voltage and 38A continuous drain current. This surface mount device offers a low 23mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for high efficiency, it boasts a maximum power dissipation of 80W and operates across a wide temperature range from -65°C to 175°C. The D2PAK package facilitates efficient heat dissipation, with typical fall and turn-on delay times of 10ns and 12ns respectively.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power80W
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Technical Specifications
Stmicroelectronics STB45NF06T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
38A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
23mR
Dual Supply Voltage
60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
980pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
80W
Mount
Surface Mount
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
80W
Rds On Max
28mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
28ns
Turn-On Delay Time
12ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB45NF06T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB45NF06T4 to view detailed technical specifications.
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