N-channel power MOSFET featuring 620V drain-source breakdown voltage and 3.8A continuous drain current. Offers a low 1.95-ohm maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, this RoHS compliant component boasts fast switching speeds with a 10ns turn-on delay and 19ns fall time. Maximum power dissipation is rated at 70W.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STB4N62K3 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
3.8A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
1.95R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
1.95R
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
450pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
1.95R
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
29ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB4N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STB4N62K3 to view detailed technical specifications.
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