N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 4A continuous drain current. Offers a low 1.7 Ohm typical drain-source on-resistance. Designed for surface mount applications in a D2PAK package, with a maximum power dissipation of 70W. Operates across a wide temperature range from -55°C to 150°C.
PackageD2PAK
Current Rating4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB4NK60ZT4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
2R
Dual Supply Voltage
600V
Fall Time
16.5ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
510pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Nominal Vgs
3.75V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Termination
SMD/SMT
Threshold Voltage
3.75V
Turn-Off Delay Time
29ns
Turn-On Delay Time
12ns
DC Rated Voltage
600V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB4NK60ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB4NK60ZT4 to view detailed technical specifications.
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