The STB50NE10L is a surface mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It has a continuous drain current of 50A and a drain to source breakdown voltage of 100V. The device features a drain to source resistance of 240mR and a power dissipation of 150W. It is packaged in a D2PAK package and is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STB50NE10L technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 240mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 135ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB50NE10L Datasheet
Download the complete datasheet for Stmicroelectronics STB50NE10L to view detailed technical specifications.
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