N-Channel Power MOSFET, D2PAK package, offering 250V drain-source breakdown voltage and 45A continuous drain current. Features a low 69mΩ drain-source on-resistance and 160W power dissipation. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including 45ns turn-on delay and 20ns fall time. RoHS compliant and suitable for surface mounting.
Stmicroelectronics STB50NF25 technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 69mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 69mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.67nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 69mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 63ns |
| Turn-On Delay Time | 45ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STB50NF25 to view detailed technical specifications.
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