N-channel MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This surface-mount component offers a low 23mΩ drain-source on-resistance and a maximum power dissipation of 300W. It operates within a temperature range of -55°C to 175°C and is packaged in a D2PAK for efficient thermal management. Key switching characteristics include a 17ns turn-on delay and 82ns turn-off delay.
PackageD2PAK
Current Rating80A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STB60NF10T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
23mR
Dual Supply Voltage
100V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
4.27nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
82ns
Turn-On Delay Time
17ns
DC Rated Voltage
100V
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB60NF10T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB60NF10T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.