N-CHANNEL Power MOSFET, D2PAK package, offering 200V Drain to Source Breakdown Voltage and 75A Continuous Drain Current. Features low 34mR Drain to Source Resistance (Rds On Max) and 190W Max Power Dissipation. Operates from -50°C to 150°C with a 20V Gate to Source Voltage. Includes 53ns Turn-On Delay Time and 29ns Fall Time.
PackageD2PAK
Current Rating75A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB75N20 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.26nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| RoHS Compliant | No |
| Series | STripFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 53ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STB75N20 Datasheet
Download the complete datasheet for Stmicroelectronics STB75N20 to view detailed technical specifications.
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