N-channel power MOSFET featuring 75V drain-source breakdown voltage and 80A continuous drain current. Offers low 11mΩ typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component operates within a -55°C to 175°C temperature range and supports up to 300W power dissipation. Key switching characteristics include a 25ns turn-on delay and 30ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STB75NF75T4 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 11mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 66ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB75NF75T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB75NF75T4 to view detailed technical specifications.
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