Stmicroelectronics
STB7NK80Z-1
N-channel 800 V, 1.5 Ohm typ., 5.2 A SuperMESH Power MOSFET in an I2PAK package
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STB7NK80Z-1 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.138nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB7NK80Z-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB7NK80Z-1 to view detailed technical specifications.
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