N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 61A continuous drain current. Offers a low 0.019 Ohm typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 190W. Includes fast switching characteristics with a 176ns fall time and 131ns turn-off delay.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STB80N20M5 technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 23mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 23MR |
| Fall Time | 176ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 4.329nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 131ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB80N20M5 Datasheet
Download the complete datasheet for Stmicroelectronics STB80N20M5 to view detailed technical specifications.
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