N-Channel MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This surface-mount device offers a low 15mΩ maximum drain-source on-resistance and 300W power dissipation. It boasts a low gate charge for efficient switching, with turn-on delay time of 26ns and fall time of 60ns. Operating across a wide temperature range of -55°C to 175°C, this RoHS compliant component is supplied in a D2PAK package on tape and reel.
PackageD2PAK
Current Rating80A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB80NF10T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
15mR
Dual Supply Voltage
100V
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
5.5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Nominal Vgs
3V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
15mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
3V
Turn-Off Delay Time
116ns
Turn-On Delay Time
26ns
DC Rated Voltage
100V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB80NF10T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB80NF10T4 to view detailed technical specifications.
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